Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain
Identifieur interne : 000B62 ( Main/Exploration ); précédent : 000B61; suivant : 000B63Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain
Auteurs : Heinrich Wolf [Allemagne] ; Horst Gieser [Allemagne] ; Wolfgang Stadler [Allemagne]Source :
- Microelectronics Reliability [ 0026-2714 ] ; 1999.
Abstract
The presented compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode considering modulation of the current gain β and gate coupling effects. For the studied 0.35 μm-CMOS devices, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of ESD protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.
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DOI: 10.1016/S0026-2714(99)00074-8
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Box 800949, D-81609, München</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region><settlement type="city">Munich</settlement></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">Microelectronics Reliability</title><title level="j" type="abbrev">MR</title><idno type="ISSN">0026-2714</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1999">1999</date><biblScope unit="volume">39</biblScope><biblScope unit="issue">11</biblScope><biblScope unit="page" from="1541">1541</biblScope><biblScope unit="page" to="1549">1549</biblScope></imprint><idno type="ISSN">0026-2714</idno></series><idno type="istex">37DBA566093327825538A3415119203C1D7BC3A3</idno><idno type="DOI">10.1016/S0026-2714(99)00074-8</idno><idno type="PII">S0026-2714(99)00074-8</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0026-2714</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The presented compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode considering modulation of the current gain β and gate coupling effects. For the studied 0.35 μm-CMOS devices, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of ESD protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.</div></front></TEI><affiliations><list><country><li>Allemagne</li></country><region><li>Bavière</li><li>District de Haute-Bavière</li></region><settlement><li>Munich</li></settlement><orgName><li>Université technique de Munich</li></orgName></list><tree><country name="Allemagne"><noRegion><name sortKey="Wolf, Heinrich" sort="Wolf, Heinrich" uniqKey="Wolf H" first="Heinrich" last="Wolf">Heinrich Wolf</name></noRegion><name sortKey="Gieser, Horst" sort="Gieser, Horst" uniqKey="Gieser H" first="Horst" last="Gieser">Horst Gieser</name><name sortKey="Stadler, Wolfgang" sort="Stadler, Wolfgang" uniqKey="Stadler W" first="Wolfgang" last="Stadler">Wolfgang Stadler</name><name sortKey="Wolf, Heinrich" sort="Wolf, Heinrich" uniqKey="Wolf H" first="Heinrich" last="Wolf">Heinrich Wolf</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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